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W29EE011P-90 ÃÖ¼ÒÁÖ¹®¼ö·® : 20°³ |
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128K ¢¥ 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ¢¥ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES ¡¤ Single 5-volt program and erase operations ¡¤ Fast page-write operations - 128 bytes per page - Page program cycle: 10 mS (max.) - Effective byte-program cycle time: 39 mS - Optional software-protected data write ¡¤ Fast chip-erase operation: 50 mS ¡¤ Read access time: 90/150 nS ¡¤ Page program/erase cycles: 1K/10K ¡¤ Ten-year data retention ¡¤ Software and hardware data protection ¡¤ Low power consumption - Active current: 25 mA (typ.) - Standby current: 20 mA (typ.) ¡¤ Automatic program timing with internal VPP generation ¡¤ End of program detection - Toggle bit - Data polling ¡¤ Latched address and data ¡¤ TTL compatible I/O ¡¤ JEDEC standard byte-wide pinouts ¡¤ Available packages: 32-pin 600 mil DIP, TSOP, and PLCC
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