Dual P-Channel PowerTrenchÒ MOSFET
Features ¡¤ –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V RDS(ON) = 105 mW @ VGS = –3.0 V RDS(ON) = 115 mW @ VGS = –2.7 V ¡¤ Extended VGSS range (¡¾12V) for battery applications ¡¤ Low gate charge ¡¤ High performance trench technology for extremely low RDS(ON) ¡¤ High power and current handling capability
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